Height-controlled InAs quantum dots by using a thin InGaAs layer

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4714-4716

  Kim, Jin Soo ^a   Yu, Phil Won ^a   Lee, Joo In ^b   Kim, Jong Su ^c   Kim, Song Gang ^d   Leem, Jae Young ^e   Jeon, Minhyon ^e  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Yeungnam University   (South Korea)

^d Joongbu University   (South Korea)

^e Inje University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INAS; INAS QUANTUM DOTS; INHOMOGENEOUS BROADENING; LARGE STRAINS; LATERAL SIZES; PEAK POSITION; STRUCTURAL AND OPTICAL PROPERTIES; TEM IMAGES;

ASPECT RATIO; GALLIUM; INDIUM ARSENIDE; MONOLAYERS; OPTICAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79956059480     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489484     Document Type: Article

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