Electron and hole effective masses in self-assembled quantum dots

European Physical Journal B

Volumn 68, Issue 2, 2009, Pages 233-236

  Zhou, A P ^a   Sheng, W D ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND MODELS; ENERGY LEVELS; GAAS; HOLE EFFECTIVE MASS; INAS; INAS/GAAS QUANTUM DOTS; LARGE ASPECT RATIOS; SELF-ASSEMBLED; SELF-ASSEMBLED QUANTUM DOTS; SMALL ASPECT RATIOS; TIGHT-BINDING METHODS;

ASPECT RATIO; ELECTRONS; INDIUM ARSENIDE; PRESSURE DROP;

SEMICONDUCTOR QUANTUM DOTS;

EID: 64149093289     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2009-00098-2     Document Type: Article

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