InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

Applied Physics Letters

Volumn 80, Issue 4, 2002, Pages 535-537

  Yeh, Nien Tze ^a   Liu, Wei Sheng ^a   Chen, Shu Han ^a   Chiu, Pe Chin ^a   Chyi, Jen Inn ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-FREE; CLADDING LAYER; HIGH CHARACTERISTIC TEMPERATURE; INAS/GAAS; INTERNAL LOSS; INTERNAL QUANTUM EFFICIENCY; LASING PROPERTIES; LOW TEMPERATURES; LOW THRESHOLD CURRENT DENSITY; ROOM TEMPERATURE; SOLID-SOURCE MOLECULAR BEAM EPITAXY;

EPITAXIAL GROWTH; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD CURRENT DENSITY;

QUANTUM DOT LASERS;

EID: 79956002518     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1445269     Document Type: Article

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