Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 84, Issue 15, 2004, Pages 2817-2819

  Yang, Tao ^a   Tatebayashi, Jun ^a   Tsukamoto, Shiro ^a   Nishioka, Masao ^a   Arakawa, Yasuhiko ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; DESORPTION; GROUND STATE; GROWTH KINETICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL DEVICES; OPTIMIZATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

EXCITATION POWER; GROWTH CONDITIONS; GROWTH RATES; LONGER-WAVELENGTH EMISSION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2442421915     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1711163     Document Type: Article

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