Optical properties of InAsGaAs surface quantum dots

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Miao, Z L ^a   Zhang, Y W ^a,b   Chua, S J ^a,b   Chye, Y H ^a   Chen, P ^a   Tripathy, S ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; DIFFUSION; MATHEMATICAL MODELS; MONOLAYERS; OPTICAL COMMUNICATION; OPTICAL PROPERTIES; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; STRAIN; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING LAYERS; PHOTOLUMINESCENCE EMISSION; STRAIN RELAXATION MECHANISM; SURFACE QUANTUM DOTS (SQD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 17044372804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1854199     Document Type: Article

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