InGaP/GaAs/InGaAs 41% concentrator cells using bi-facial epigrowth

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1259-1264

  Wojtczuk, Steven ^a   Chiu, Philip ^a   Zhang, Xuebing ^a   Derkacs, Daniel ^a   Harris, Chris ^a   Pulver, Daryl ^a   Timmons, Mike ^b  

^a Spire Semiconductor   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATOR CELLS; EPITAXIAL LIFTOFF; EPITAXIALLY GROWN; EPIWAFERS; GAAS; GAAS WAFER; GLOVEBOXES; INGAP/GAAS/INGAAS; LATTICE-MATCHED; LATTICE-MISMATCHED; MANUFACTURING PROCESS; MOCVD REACTOR; PROCESS STEPS; WAFER SURFACE; WORLD RECORD EFFICIENCY;

CONCENTRATION (PROCESS); EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SILICON WAFERS;

WAFER BONDING;

EID: 78650125770     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614196     Document Type: Conference Paper

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