A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor

Journal of Applied Physics

Volumn 113, Issue 16, 2013, Pages

  Mohammad Tabatabaei, Seyed ^a   Noei, Maziar ^a   Khaliji, Kaveh ^a   Pourfath, Mahdi ^a,b   Fathipour, Morteza ^a  

^a UNIVERSITY OF TEHRAN   (Iran)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAINS; DOUBLE GATE FIELD EFFECT TRANSISTORS; EFFECTIVE MASS; ELECTRONIC BAND STRUCTURE; FIRST-PRINCIPLES STUDY; PERFORMANCE IMPROVEMENTS; STRAIN ENGINEERING; STRAIN VALUES;

FIELD EFFECT TRANSISTORS; MONOLAYERS;

MOLYBDENUM COMPOUNDS;

EID: 84877275822     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803032     Document Type: Article

References (37)

1. K. S. Novoselov, A. Geim, S. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
2. F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, Nature Photon. 4, 611 (2010). 10.1038/nphoton.2010.186
3. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Nat. Nanotechnol. 5, 722 (2010). 10.1038/nnano.2010.172
4. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, ACS Nano 6, 74 (2012). 10.1021/nn2024557
5. K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. L. Stormer, Solid State Comm. 146, 351 (2008). 10.1016/j.ssc.2008. 02.024
6. K. S. Novoselov, Z. Jiang, Y. Zhang, S. V. Morozov, H. L. Stormer, U. Zeitler, J. C. Maan, G. S. Boebinger, P. Kim, and A. K. Geim, Science 315, 1379 (2007). 10.1126/science.1137201
7. X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science 319, 1229 (2008). 10.1126/science.1150878
8. J. Bai, X. Zhong, S. Jiang, Y. Huang, and X. Duan, Nat. Nanotechnol. 5, 190 (2010). 10.1038/nnano.2010.8
9. R. Balog, B. Jorgensen, L. Nilsson, M. Andersen, E. Rienks, M. Bianchi, M. Fanetti, E. Laegsgaard, A. Baraldi, S. Lizzit, Z. Sljivancanin, F. Besenbacher, B. Hammer, T. G. Pedersen, P. Hofmann, and L. Hornekaer, Nature Mater. 9, 315 (2010). 10.1038/nmat2710
10. D. R. Cooper, B. DAnjou, N. Ghattamaneni, B. Harack, M. Hilke, A. Horth, N. Majlis, M. Massicotte, L. Vandsburger, E. Whiteway, and V. Yu, ISRN Condens. Matter Phys. 2012, 1 (2012). 10.5402/2012/501686
11. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nature Nanotechnol. 7, 699 (2012). 10.1038/nnano.2012.193
12. K. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010). 10.1103/PhysRevLett.105.136805
13. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Proc. Nat. Acad. Sci. 102, 10451 (2005). 10.1073/pnas.0502848102
14. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). 10.1038/nnano.2010.279
15. Y. Yoon, K. Ganapathi, and S. Salahuddin, Nano Lett. 11, 3768 (2011). 10.1021/nl2018178
16. See http://www.itrs.net/ for International technology road map for semiconductors.
17. B. Radisavljevic, M. B. Whitwick, and A. Kis, ACS Nano 5, 9934 (2011). 10.1021/nn203715c
18. E. Scalise, M. Houssa, G. Pourtois, V. Afanasev, and A. Stesmans, Nano Res. 5, 43 (2012). 10.1007/s12274-011-0183-0
19. Q. Yue, J. Kang, Z. Shao, X. Zhanga, S. Changa, G. Wanga, S. Qina, and J. Li, Phys. Lett. A 376, 1166 (2012). 10.1016/j.physleta.2012.02.029
20. Y. Ding, Y. Wang, J. Ni, L. Shi, S. Shi, and W. Tang, Physica B 406, 2254 (2011). 10.1016/j.physb.2011.03.044
21. W. S. Yun, S. Han, S. C. Hong, I. G. Kim, and J. Lee, Phys. Rev. B 85, 033305 (2012). 10.1103/PhysRevB.85.033305
22. P. Lu, X. Wu, W. G. and X. C. Zeng, Phys. Chem. Chem. Phys. 14, 13035 (2012). 10.1039/c2cp42181j
23. T. Li, Phys. Rev. B 85, 235407 (2012). 10.1103/PhysRevB.85.235407
24. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
25. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999). 10.1103/PhysRevB.59.1758
26. P. E. Blchl, Phys. Rev. B 50, 953 (1994).
27. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
28. Z. Y. Zhu, Y. C. Cheng, and U. Schwingenschlögl, Phys. Rev. B 84, 153402 (2011). 10.1103/PhysRevB.84.153402
29. A. Rahman, S. Datta, and M. S. Lundstrom, IEEE Trans. Electron Devices 50, 1853 (2003). 10.1109/TED.2003.815366
30. Y. Li, Z. Zhou, S. Zhang, and Z. Chen, J. Am. Chem. Soc. 130, 16739 (2008). 10.1021/ja805545x
31. A. R. Botello-Mendez, F. Lopez-Urias, M. Terrones, and H. Terrones, Nanotechnology 20, 325703 (2009). 10.1088/0957-4484/20/32/325703
32. S. Lebegue and O. Eriksson, Phys. Rev. B 79, 115409 (2009). 10.1103/PhysRevB.79.115409
33. H. S. S. Ramakrishna Matte, A. Gomathi, A. K. Manna, Angew. Chem., Int. Ed. 49, 4059 (2010). 10.1002/anie.201000009
34. L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, IEEE Trans. Electron Devices 58, 3042 (2011). 10.1109/TED.2011.2159221
35. H. Liu, A. T. Neal, and P. D. Ye, ACS Nano 6, 8563 (2012). 10.1021/nn303513c
36. S. Kim, A. Konar, W. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. Yoo, J. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, Nature Commun. 3, 1011 (2012). 10.1038/ncomms2018
37. S. Das, H. Y. Chen, A. V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013). 10.1021/nl303583v