Low reset current in stacked AlOx/WOx resistive switching memory

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1439-1441

  Song, Y L ^a   Liu, Y ^a   Wang, Y L ^a   Wang, M ^a   Tian, X P ^a   Yang, L M ^a   Lin, Y Y ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

AlOx WOx; bilayer; complex impedance spectroscopy (CIS); resistive switching

Indexed keywords

ALOX/WOX; BI-LAYER; BI-LAYER STRUCTURE; CAPACITANCE VOLTAGE; COMPLEX IMPEDANCE SPECTROSCOPY; CONDUCTIVE FILAMENTS; LOW RESET CURRENTS; RESET CURRENTS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORIES; SINGLE-LAYER STRUCTURE;

ELECTRIC IMPEDANCE MEASUREMENT; SPECTROSCOPIC ANALYSIS; SWITCHING; SWITCHING SYSTEMS;

SWITCHING FUNCTIONS;

EID: 80053568559     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162055     Document Type: Article

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