A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 901-907

  Chien, W C ^a   Chen, Y C ^a   Lai, E K ^a,b   Lee, F M ^a   Lin, Y Y ^a   Chuang, Alfred T H ^a   Chang, K P ^a   Yao, Y D ^c   Chou, T H ^d   Lin, H M ^d   Lee, M H ^a   Shih, Y H ^a   Hsieh, K Y ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c FU JEN CATHOLIC UNIVERSITY   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

3D STACKING; CMOS CIRCUITS; CMOS COMPATIBLE; CONDUCTING FILAMENT; CONDUCTIVE AFM; DOWN-STREAM PLASMAS; ELECTRODE MATERIAL; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY LAYERS; MEMORY PERFORMANCE; MEMORY WINDOW; NON-VOLATILE MEMORIES; RAPID THERMAL OXIDATION; REDUCTION-OXIDATION; SCHOTTKY BARRIERS; SWITCHING MECHANISM; SWITCHING SPEED; TUNGSTEN OXIDE;

CMOS INTEGRATED CIRCUITS; OXIDATION; OXIDES; PLATINUM; REGENERATORS; SCHOTTKY BARRIER DIODES; TUNGSTEN; TUNGSTEN COMPOUNDS;

FLASH MEMORY;

EID: 79959331589     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6271-x     Document Type: Article

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