Resistive dependence of magnetic properties in nonvolatile Ti/Mn: TiO 2 / SrTi0.993Nb0.007O3 /Ti memory device

Applied Physics Letters

Volumn 94, Issue 25, 2009, Pages

  Wu, S X ^a   Li, X Y ^a   Xing, X J ^a   Hu, P ^a   Yu, Y P ^a   Li, S W ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY DEVICE; MN DOPED TIO; NEGATIVE VOLTAGE; NON-VOLATILE; PARAMAGNETIC BEHAVIOR; POSITIVE VOLTAGE; RESISTANCE STATE; SRTIO; TIO; TUNABILITY; WEAK FERROMAGNETISM;

ELECTRIC FIELDS; FERROMAGNETISM; MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; NIOBIUM; OXYGEN;

MANGANESE;

EID: 67649496308     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159740     Document Type: Article

References (21)

1. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 0003-6951 76, 2749 (2000). 10.1063/1.126464
2. S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, and J. Jacobson, Appl. Phys. Lett. 0003-6951 85, 317 (2004). 10.1063/1.1768305
3. M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, Phys. Rev. Lett. 0031-9007 92, 178302 (2004). 10.1103/PhysRevLett.92.178302
4. X. Chen, N. J. Wu, J. Strozier, and A. Ignatiev, Appl. Phys. Lett. 0003-6951 87, 233506 (2005). 10.1063/1.2139843
5. R. Waser and M. Aono, Nature Mater. 1476-1122 6, 833 (2007). 10.1038/nmat2023
6. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nature Mater. 1476-1122 5, 312 (2006). 10.1038/nmat1614
7. S. Sawa, Mater. Today 1369-7021 11, 28 (2008). 10.1016/S1369-7021(08) 70119-6
8. G. I. Meijer, Science 0036-8075 319, 1625 (2008). 10.1126/science.1153909
9. K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, T. Ohnishi, M. Lippmaa, and H. Koinuma, Adv. Mater. (Weinheim, Ger.) 0935-9648 19, 1711 (2007). 10.1002/adma.200601957
10. D. S. Shang, J. R. Sun, L. Shi, and B. G. Shen, Appl. Phys. Lett. 0003-6951 93, 102106 (2008). 10.1063/1.2978240
11. Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 0031-9007 98, 146403 (2007). 10.1103/PhysRevLett.98.146403
12. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature (London) 0028-0836 453, 80 (2008). 10.1038/nature06932
13. M. Venkatesan, C. B. Fitzgerald, and J. M. D. Coey, Nature (London) 0028-0836 430, 630 (2004). 10.1038/430630a
14. W. Yan, Z. Sun, Z. Pan, Q. Liu, T. Yao, Z. Wu, C. Song, F. Zeng, Y. Xie, T. Hu, and S. Wei, Appl. Phys. Lett. 0003-6951 94, 042508 (2009). 10.1063/1.3075844
15. H. Y. Xu, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, and R. Mu, Appl. Phys. Lett. 0003-6951 88, 242502 (2006). 10.1063/1.2213929
16. S. X. Wu, L. M. Xu, X. J. Xing, S. M. Chen, Y. B. Yuan, Y. J. Liu, Y. P. Yu, X. Y. Li, and S. W. Li, Appl. Phys. Lett. 0003-6951 93, 043502 (2008). 10.1063/1.2965469
17. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 1748-3387 3, 429 (2008). 10.1038/nnano.2008.160
18. R. Muenstermann, R. Dittmann, K. Szot, S. Mi, C. -L. Jia, P. Meuffels, and R. Waser, Appl. Phys. Lett. 0003-6951 93, 023110 (2008). 10.1063/1.2959074
19. M. Snure, D. Kumar, and A. Tiwari, Appl. Phys. Lett. 0003-6951 94, 012510 (2009). 10.1063/1.3067998
20. H. Chou, C. P. Lin, J. C. A. Huang, and H. S. Hsu, Phys. Rev. B 0163-1829 77, 245210 (2008). 10.1103/PhysRevB.77.245210
21. S. H. Jeon, B. H. Park, J. Lee, B. Lee, and S. Han, Appl. Phys. Lett. 0003-6951 89, 042904 (2006). 10.1063/1.2234840