Structural evolution and growth mechanism of self-assembled wurtzite gallium nitride (GaN) nanostructures by chemical vapor deposition

Journal of Physical Chemistry C

Volumn 117, Issue 14, 2013, Pages 7348-7357

  Purushothaman, V ^a   Jeganathan, K ^a  

^a BHARATHIDASAN UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED DEPOSITION; GALLIUM NITRIDES (GAN); ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; SELECTED AREA ELECTRON DIFFRACTION PATTERN; SOURCE TO SUBSTRATE DISTANCES; STRUCTURAL EVOLUTION; SURFACE DIFFUSION MODEL; X-RAY DIFFRACTION STUDIES;

CHEMICAL VAPOR DEPOSITION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; MORPHOLOGY; NANORODS; NANOSHEETS; NANOWIRES; PHOTOLUMINESCENCE; VAPORS; X RAY DIFFRACTION; ZINC SULFIDE;

MICROCRYSTALS;

EID: 84876205241     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3120572     Document Type: Article

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