Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3691-3696

  Shan, W ^a   Schmidt, T ^a   Yang, X H ^a   Song, J J ^a   Goldenberg, B ^b  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; ENERGY GAP; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PRESSURE EFFECTS; RELAXATION PROCESSES; STREAK CAMERAS; THERMAL EFFECTS;

CARRIER CAPTURE PROCESS; DIAMOND ANVIL CELL; GALLIUM NITRIDE; HYDROSTATIC DEFORMATION POTENTIAL; PHOTOREFLECTANCE SPECTROSCOPY; RADIATIVE DECAY; STIMULATED EMISSION; STIMULATED LASING; VARSHNI RELATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030129920     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361200     Document Type: Article

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