Epitaxial growth of one-dimensional GaN nanostructures with enhanced near-band edge emission by chemical vapor deposition

Applied Physics Letters

Volumn 96, Issue 1, 2010, Pages

  Song, Taeseup ^a   Park, Won Il ^a   Paik, Ungyu ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; EVAPORATION TEMPERATURE; GAN NANOSTRUCTURES; GAN THIN FILMS; LUMINESCENCE CHARACTERISTICS; NEAR BAND EDGE EMISSIONS; ONE-DIMENSIONAL NANOSTRUCTURE; OPTICAL CHARACTERISTICS;

CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; LASER RADIATION; LUMINESCENCE; MORPHOLOGY; NANOSTRUCTURES; OPTICAL PROPERTIES;

GALLIUM ALLOYS;

EID: 75749108205     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3279147     Document Type: Article

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