Ferroelectric polymer-gated graphene memory with high speed conductivity modulation

Nanotechnology

Volumn 24, Issue 17, 2013, Pages

  Hwang, Hyeon Jun ^a   Yang, Jin Ho ^a   Lee, Young Gon ^a   Cho, Chunhum ^a   Kang, Chang Goo ^a   Kang, Soo Cheol ^a   Park, Woojin ^a   Lee, Byoung Hun ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIT LINES; CONDUCTIVITY MODULATION; FERROELECTRIC POLYMERS; HIGH SPEED; PROGRAMMING SPEED; PVDF-TRFE;

FERROELECTRICITY;

GRAPHENE;

EID: 84876154433     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/17/175202     Document Type: Article

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