Long-term retention in organic ferroelectric-graphene memories

Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

  Raghavan, Santosh ^a   Stolichnov, Igor ^a   Setter, Nava ^a   Heron, Jean Savin ^a   Tosun, Mahmut ^a   Kis, Andras ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL RESISTANCE; CHARGE TRAP; CURRENT DECAY; CURRENT SATURATION; GRAPHENE TRANSISTORS; HIGH QUALITY; LONG TERM STABILITY; LONG-TERM RETENTION; LOW DENSITY; LOW-RESISTANCE STATE; MEMORY APPLICATIONS; MEMORY STATE; RETENTION MODELS; TIME DEPENDENCE;

DRAIN CURRENT; FERROELECTRICITY; GRAPHENE;

FIELD EFFECT TRANSISTORS;

EID: 84855973741     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3676055     Document Type: Article

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