Fabrication of pores in a silicon carbide wafer by electrochemical etching with a glassy-carbon needle electrode

ACS Applied Materials and Interfaces

Volumn 5, Issue 7, 2013, Pages 2580-2584

  Sugita, Tomohiko ^a   Hiramatsu, Kazuki ^a   Ikeda, Shigeru ^a   Matsumura, Michio ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

electrochemistry; glassy carbon; micromachining; silicon carbide; wet etching

Indexed keywords

ANODIC POTENTIALS; CONTACT AREAS; ELECTROCHEMICAL METHODS; GC ELECTRODE; NEEDLE ELECTRODES; PORE FORMATION; SILICON CARBIDE WAFERS; SILICON CARBIDES (SIC);

CARBON; ELECTROCHEMISTRY; GLASS; GLASSY CARBON; MICROMACHINING; NEEDLES; PORE SIZE; SILICON CARBIDE; SULFURIC ACID; WET ETCHING;

ELECTROCHEMICAL ELECTRODES;

EID: 84876154255     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am303167c     Document Type: Article

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