메뉴 건너뛰기




Volumn 112, Issue 1, 2004, Pages 36-43

Micromachining of p-type 6H-SiC by electrochemical etching

Author keywords

Electrochemical etching; MEMS; Micromachining; p Type 6H SiC

Indexed keywords

CURRENT DENSITY; ELECTROCHEMISTRY; ELECTROLYTIC POLISHING; ETCHING; MAGNETOPLASMA; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; MORPHOLOGY; OPTIMIZATION; OXIDATION; PASSIVATION; SINGLE CRYSTALS; SURFACE ROUGHNESS; TOUGHNESS;

EID: 2142654981     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.09.046     Document Type: Article
Times cited : (21)

References (18)
  • 1
    • 0028425211 scopus 로고
    • SiC for sensors and high-temperature electronics
    • Müller G., Krötz G., Niemann E. SiC for sensors and high-temperature electronics. Sens. Actuators A. 43:1994;259-268.
    • (1994) Sens. Actuators A , vol.43 , pp. 259-268
    • Müller, G.1    Krötz, G.2    Niemann, E.3
  • 2
    • 0033361372 scopus 로고    scopus 로고
    • SiC MEMS: Opportunities and challenges for applications in harsh environments
    • Mehregany M., Zorman C.A. SiC MEMS: opportunities and challenges for applications in harsh environments. Thin Solid Films. 355-356:1999;518-524.
    • (1999) Thin Solid Films , vol.355-356 , pp. 518-524
    • Mehregany, M.1    Zorman, C.A.2
  • 3
    • 0033750798 scopus 로고    scopus 로고
    • Silicon carbide as a new MEMS technology
    • Sarro P.M. Silicon carbide as a new MEMS technology. Sens. Actuators A. 82:2000;210-218.
    • (2000) Sens. Actuators A , vol.82 , pp. 210-218
    • Sarro, P.M.1
  • 6
    • 0035535265 scopus 로고    scopus 로고
    • Deep etching of silicon carbide for micromachining applications: Etching rates and etch mechanisms
    • Chabert P. Deep etching of silicon carbide for micromachining applications: etching rates and etch mechanisms. J. Vac. Scil. Technol. B. 19:2001;1339-1345.
    • (2001) J. Vac. Scil. Technol. B , vol.19 , pp. 1339-1345
    • Chabert, P.1
  • 7
    • 0042891503 scopus 로고
    • The etching of silicon carbide
    • Jennings V.J. The etching of silicon carbide. Mat. Res. Bull. 4:1969;S199-S210.
    • (1969) Mat. Res. Bull. , vol.4
    • Jennings, V.J.1
  • 9
    • 2142796750 scopus 로고
    • Silicon Carbide, R.C. Marshall, J.W. Faust, C.E. Ryan (Eds.), University of South Carolina Press, Columbia, South Carolina
    • W. Faust, Jr., H.M. Liaw, Tables of Etchants for SiC, Silicon Carbide, R.C. Marshall, J.W. Faust, C.E. Ryan (Eds.), University of South Carolina Press, Columbia, South Carolina, 1974.
    • (1974) Tables of Etchants for SiC
    • Faust Jr., W.1    Liaw, H.M.2
  • 11
    • 0034228128 scopus 로고    scopus 로고
    • Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals
    • Kayambaki M., Tsagaraki K., Cimalla V., Zekentes K., Yakimova R. Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals. J. Electrochem. Soc. 147:2000;2744-2748.
    • (2000) J. Electrochem. Soc. , vol.147 , pp. 2744-2748
    • Kayambaki, M.1    Tsagaraki, K.2    Cimalla, V.3    Zekentes, K.4    Yakimova, R.5
  • 12
    • 0028388084 scopus 로고
    • Photoelectrochemical etching of 6H-SiC
    • Shor J.S., Kurtz A.D. Photoelectrochemical etching of 6H-SiC. J. Electrochem. Soc. 141:1994;778-781.
    • (1994) J. Electrochem. Soc. , vol.141 , pp. 778-781
    • Shor, J.S.1    Kurtz, A.D.2
  • 16
    • 2142683952 scopus 로고    scopus 로고
    • Cree Inc., Durhan, NC, USA.
    • Cree Inc., Durhan, NC, USA.
  • 18
    • 2142850975 scopus 로고
    • Ph.D. Dissertation Fachbereich Chemie der Universität Hamburg, Germany
    • I. Lauermann, Die Photoelektrochemie von Siliciumcarbid, Ph.D. Dissertation Fachbereich Chemie der Universität Hamburg, Germany, 1991.
    • (1991) Die Photoelektrochemie von Siliciumcarbid
    • Lauermann, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.