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Volumn 95, Issue 3, 2002, Pages 191-194
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Study on the photoelectrochemical etching process of semiconducting 6H-SiC wafer
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Author keywords
Electrolyte; Etching rate; Photoelectrochemical etching; SiC
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Indexed keywords
ANISOTROPY;
ELECTRIC FIELD EFFECTS;
ELECTROCHEMISTRY;
ELECTROLYTES;
ENERGY DISPERSIVE SPECTROSCOPY;
ETCHING;
HYDROFLUORIC ACID;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON WAFERS;
SURFACE ROUGHNESS;
THERMOOXIDATION;
PHOTOELECTROCHEMICAL ETCHING;
SILICON CARBIDE;
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EID: 0036723472
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(02)00163-0 Document Type: Article |
Times cited : (16)
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References (7)
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