InGaN-based resonant-cavity light-emitting diodes fabricated with a Ta 2O5SiO2 distributed bragg reflector and metal reflector for visible light communications

IEEE/OSA Journal of Display Technology

Volumn 9, Issue 5, 2013, Pages 365-370

  Tsai, Chia Lung ^a   Yen, Chih Ta ^a   Huang, Wei Jhih ^a   Xu, Zhong Fan ^a   Ko, Sun Chien ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

InGaN; phosphor layer; Resonant cavity light emitting diodes (RCLEDs); visible light communications

Indexed keywords

FREE SPACE OPTICAL COMMUNICATION; INGAN; LIGHT-EXTRACTION EFFICIENCY; OPERATIONAL CHARACTERISTICS; PHOSPHOR LAYERS; RESONANT CAVITY LIGHT EMITTING DIODE; RESONANT-CAVITY LIGHT EMITTING DIODES (RCLEDS); VISIBLE LIGHT COMMUNICATIONS;

DATA ENCAPSULATION; DISTRIBUTED BRAGG REFLECTORS; EMISSION SPECTROSCOPY; OPTICAL COMMUNICATION; REFLECTION; TANTALUM OXIDES;

LIGHT EMITTING DIODES;

EID: 84876088059     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2012.2224843     Document Type: Article

References (40)

1. M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, andM. G. Craford, "Status and future of high-power lightemitting diodes for solid-state lighting," J. Display Technol., vol. 3, no. 2, pp. 160-175, Jun. 2007. (Pubitemid 46808672)
2. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol., vol. 27, pp. 024001-1-024001-14, 2012.
3. D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy," J. Vac. Sci. Technol. A, vol. 30, pp. 041513-1-041513-8, 2012.
4. H. Zhao, G. Liu, and N. Tansu, "Analysis of InGaN-delta-InN quantum wells for light-emitting diodes," Appl. Phys. Lett., vol. 97, pp. 131114-1-131114-3, 2010.
5. J. Zhang and N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys., vol. 110, pp. 113110-1-113110-5, 2011.
6. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, "Approaches for high internal quantum efficiency green InGaN lightemitting diodes with large overlap quantum wells," Opt. Express, vol. 19, no. S4, pp. A991-A1007, 2011.
7. H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron., vol. 3, pp. 283-295, 2009.
8. G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, "Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography," Nanoscale Res. Lett., vol. 6, pp. 342-1-342-10, 2011.
9. H. Zhao, J. Zhang, G. Liu, and N. Tansu, "Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes," Appl. Phys. Lett., vol. 98, pp. 151115-1-151115-3, 2011.
10. Y. K. Ee, J. M. Biser, W. Cao, H.M. Chan, R. P. Vinci, and N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 4, pp. 1066-1072, Jul./Aug. 2009.
11. Y. K. Ee, X. H. Li, J. Biser,W. Cao, H.M. Chan, R. P. Vinci, and N. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Cryst. Growth, vol. 312, pp. 1311-1315, 2010.
12. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett., vol. 98, pp. 151102-1-151102-3, 2011.
13. H. J. Kim, S. Choi, S. S. Kim, J. H. Ryou, P. D. Yoder, R. D. Dupuis, A. M. Fischer, K. Sun, and F. A. Ponce, "Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes," Appl. Phys. Lett., vol. 96, pp. 101102-1-101102-3, 2012.
14. H. Zhao, G. Liu, R. A. Arif, and N. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes," Solid-State Electron., vol. 54, pp. 1119-1124, 2010.
15. C. L. Tsai, G. C. Fan, and Y. S. Lee, "Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes," Appl. Phys. A, vol. 104, pp. 319-323, 2011.
16. J. J.Wierer, A. David, and M. M. Megens, "III-nitride photonic-crystal light-emitting diodes with high extraction efficiency," Nature Photon., vol. 3, pp. 163-169, 2009.
17. E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, "Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes," Appl. Phys. Lett., vol. 98, pp. 081104-1-081104-3, 2011.
18. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, "Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 4, pp. 1218-1225, July/Aug. 2009.
19. Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, "Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO/polystyrene microlens arrays," Appl. Phys. Lett., vol. 91, pp. 221107-1-221107-3, 2007.
20. X. H. Li, R. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, "Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios," IEEE Photon. J., vol. 3, no. 3, pp. 489-499, June 2011.
21. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, "Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures," Opt. Express, vol. 17, no. 16, pp. 13747-13757, 2009.
22. W. H. Koo, W. Youn, P. Zhu, X. H. Li, N. Tansu, and F. So, "Light extraction of organic light emitting diodes by defective hexagonal-closepacked array," Adv. Func. Mater., vol. 22, pp. 3454-3459, 2012.
23. H. Benisty, H. D. Neve, and C. Weisbuch, "Impact of planar microcavity effects on light extraction-part I: Basic concepts and analytical trends," IEEE J. Quantum Electron., vol. 34, no. 9, pp. 1612-1631, Sep. 1998. (Pubitemid 128600316)
24. E. F. Schubert, N. E. J. Hunt,M.Micovic, R. J.Malik, D. L. Sivco, A. Y. Cho, and G. J. Zydzik, "Highly efficient light-emitting diodes with microcavities," Science, vol. 265, pp. 943-945, 1994. (Pubitemid 24282721)
25. S. Y. Huang, R. H. Horng, J.W. Shi, H. C. Kuo, and D. S.Wuu, "Highperformance InGaN-based green resonant-cavity light-emitting diodes for plastic optical fiber applications," J. Lightw. Technol., vol. 27, no. 18, pp. 4084-4090, Sep. 2009.
26. Y. Tanaka, T. Komine, S. Haruyama, and M. Nakagawa, "Indoor visible light data transmission system utilizing white LED lights," IEICE Trans. Commun., vol. E86-B, no. 8, pp. 2440-2454, Aug. 2003.
27. D. C. O'Brien, G. E. Faulkner, E. B. Zyambo, K. Jim, D. J. Edwards, P. Stavrinou, G. Parry, J. Bellon, M. J. Sibley, V. A. Lalithambika, V. M. Joyner, R. J. Samsudin, D. M. Holburn, and R. J. Mears, "Integrated transceivers for optical wireless communications," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 1, pp. 173-183, Jan./Feb. 2005. (Pubitemid 40303988)
28. Z. Liu, S. Liu, K. Wang, and X. Luo, "Status and prospects for phosphor-based white LED packaging," Front. Optoelectron. China, vol. 2, no. 2, pp. 119-140, 2009.
29. R. W. Martin, P. R. Edwards, H. S. Kim, K. S. Kim, T. Kim, I. M. Watson, M. D. Dawson, Y. Cho, T. Sands, and N. W. Cheung, "Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback," Appl. Phys. Lett., vol. 79, pp. 3029-3031, 2001. (Pubitemid 33627432)
30. C. C. Lin and C. T. Lee, "GaN-based resonant-cavity light-emitting diodes with top and bottom dielectric distributed Bragg reflectors," IEEE Photon. Technol. Lett., vol. 22, no. 17, pp. 1291-1293, Sep. 2010.
31. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, "Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes," Appl. Phys. Lett., vol. 92, pp. 053502-1-053502-3, 2008.
32. Y. C. Shen, J. J. Wierer,M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, "Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes," Appl. Phys. Lett., vol. 82, pp. 2221-2223, 2003.
33. N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, M. Umeno, and T. Jimbo, "Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire," Appl. Phys. Lett., vol. 76, pp. 1804-1806, 2000.
34. D. Delbeke, R. Bockstaele, P. Bienstman, R. Baets, and H. Benisty, "High-efficiency semiconductor resonant-cavity light-emitting diodes: A review," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 189-206, Mar./Apr. 2002. (Pubitemid 34659049)
35. H. S. Oh, J. H. Joo, J. H. Lee, J. H. Baek, J. W. Seo, and J. S. Kwak, "Structural optimization of high-power AlGaInP resonant cavity lightemitting diodes for visible light communications," Jpn. J. Appl. Phys., vol. 47, pp. 6214-6216, 2008.
36. M. Ahmed and A. E. Lafi, "Large-signal analysis of analog intensity modulation of semiconductor lasers," Opt. Laser Technol., vol. 40, pp. 809-819, 2008.
37. M. Guina, S. Orsila, M. Dumitrescu, M. Saarinen, P. Sipilä, V. Vilokkinen, B. Roycroft, P. Uusimaa, M. Toivonen, and M. Pessa, "Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth," IEEE Photon. Technol. Lett., vol. 12, no. 7, pp. 786-788, Jul. 2000.
38. S. C. Allen and A. J. Steckl, "A nearly ideal phosphor-converted white light-emitting diode," Appl. Phys. Lett., vol. 92, pp. 143309-1-143309-3, 2008.
39. H. L. Minh, D. O'Brien, G. Faulkner, L. Zeng, K. Lee, D. Jung, Y. Oh, and E. T. Won, "100-Mb/s NRZ visible light communications using a postequalized white LED," IEEE Photon. Technol. Lett., vol. 21, no. 15, pp. 1063-1065, Aug. 2009.
40. K. D. Langer, J. Vu?i?, C. Kottke, L. F. del Rosal, S. Nerreter, and J. Walewski, "Advances and prospects in high-speed information broadcast using phosphorescent white-light LEDs," in 11th Int. Conf. on Transparent Optical Netw. (ICTON '09), 2009, pp. 1-6.