Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires

Applied Physics Letters

Volumn 100, Issue 15, 2012, Pages

  Oh, Eunsoon ^a   Lee, Byoung Woo ^a   Shim, So Jeong ^b   Choi, Heon Jin ^b   Son, Byoung Hee ^c   Ahn, Yeong Hwan ^c   Dang, Le Si ^d  

^a Chungnam National University   (South Korea)

^b Yonsei University   (South Korea)

^c Ajou University   (South Korea)

^d LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING EFFECTS; BLUE SHIFT; CHEMICAL VAPOR DEPOSITION METHODS; ELECTRON-BEAM-INDUCED CURRENT; FULL WIDTH HALF MAXIMUM; GAN NANOWIRES; HEAVY DOPING; LOW TEMPERATURES; MINORITY CARRIER; N-TYPE DOPING; NEAR BAND EDGE EMISSIONS; PT CATALYSTS; SINGLE-CRYSTALLINE;

CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; NANOWIRES; PLATINUM;

ELECTRIC CURRENTS;

EID: 84859798339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3702797     Document Type: Article

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