On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via laser-localized heating

ACS Nano

Volumn 7, Issue 3, 2013, Pages 2090-2098

  Ryu, Sang Gil ^a   Kim, Eunpa ^a   Yoo, Jae Hyuck ^a   Hwang, David J ^c   Xiang, Bin ^a,b   Dubon, Oscar D ^b   Minor, Andrew M ^b   Grigoropoulos, Costas P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California Berkeley   (United States)

^c Stony Brook University   (United States)

Author keywords

facet; germanium nanowires; laser assisted growth; site and shape selective integration; taper; vertical orientation

Indexed keywords

ABSORPTION AND SCATTERINGS; FACET; FINITE DIFFERENCE TIME DOMAIN ANALYSIS; GERMANIUM NANOWIRE (GENWS); GERMANIUM NANOWIRES; LASER-ASSISTED GROWTH; SEMICONDUCTOR NANOWIRE; TAPER;

ELECTRON BEAM LITHOGRAPHY; FINITE DIFFERENCE TIME DOMAIN METHOD; GERMANIUM; INTEGRATION; LIGHT ABSORPTION; NANOWIRES; SILICON; TIME DOMAIN ANALYSIS;

SEMICONDUCTOR LASERS;

EID: 84875659690     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400186c     Document Type: Article

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