Kinetics and reaction mechanisms of laser-assisted chemical vapor deposition of polycrystalline silicon dots from silane

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1553-1559

  Pauleau, Y ^a   Tonneau, D ^b  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON-ION LASER; BUFFER GAS; CONTINUOUS WAVES; CONVENTIONAL REACTORS; DEPOSITION ZONE; FLUID REGIME; GASPHASE; INELASTIC COLLISION; IR LASERS; KINETIC DATA; KINETIC REGIME; LASER ILLUMINATION; LASER POWER; LASER-ASSISTED CHEMICAL VAPOR DEPOSITIONS; LASER-INDUCED DEPOSITION; PHOTON INTERACTIONS; POLYCRYSTALLINE-SI; RATE-LIMITING STEPS; REACTION MECHANISM; REACTIVE SPECIES; REAR SIDE; SI FILMS; SI SURFACES; SILYLENES; SURFACE TEMPERATURES; VISIBLE LASERS;

ARGON LASERS; ATMOSPHERIC TEMPERATURE; CARBON DIOXIDE; CHEMICAL VAPOR DEPOSITION; DEPOSITION RATES; HYDROGEN; INTERFACES (MATERIALS); KINETICS; MOLECULES; POLYSILICON; PYROLYSIS; SILICON OXIDES; SURFACE PROPERTIES; SURFACE REACTIONS; VAPORS;

REACTION KINETICS;

EID: 0036469571     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430884     Document Type: Article

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