Unconventional growth mechanism for monolithic integration of III-V on silicon

ACS Nano

Volumn 7, Issue 1, 2013, Pages 100-107

  Ng, Kar Wei ^a   Ko, Wai Son ^a   Tran, Thai Truong D ^a   Chen, Roger ^a   Nazarenko, Maxim V ^b   Lu, Fanglu ^a   Dubrovskii, Vladimir G ^b   Kamp, Martin ^c   Forchel, Alfred ^c   Chang Hasnain, Connie J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^c UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

critical thickness; III V on Si; laser; nanoneedle; nanopillar; nanowire; transmission electron microscopy

Indexed keywords

BULK MATERIALS; CATALYST-FREE; CORE-SHELL; CRITICAL THICKNESS; CRYSTAL PHASE; DEVICE STRUCTURES; DIRECT CONTACT; DIRECT GROWTH; ELECTRICAL CONDUCTION; GAAS; GROWTH MECHANISMS; GROWTH MODES; HETEROGENEOUS INTEGRATION; HETEROGENEOUS SUBSTRATES; III-V ON SI; INGAAS/GAAS; LATTICE-MISMATCHED; LOW TEMPERATURES; MISFIT STRESS; MONOLITHIC INTEGRATION; NANOPILLAR; NANOPILLARS; OUTER LAYER; RADIAL GEOMETRIES; RELAXATION MECHANISM; SHARP CONTRAST; SHELL LAYERS; SILICON SUBSTRATES; STACKING DISORDERS; THERMAL COEFFICIENTS; TRANSISTOR PERFORMANCE; TRANSITION REGIONS; WURTZITES;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; LASERS; LATTICE MISMATCH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; NANONEEDLES; NANOWIRES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SILICON NITRIDE; SILICON OXIDES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

SILICON;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

MLCS; MLOWN;

EID: 84872846978     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3028166     Document Type: Article

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