Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

IEEE/OSA Journal of Display Technology

Volumn 9, Issue 4, 2013, Pages 239-243

  Yu, S F ^a   Lin, Ray Ming ^b   Chang, S J ^a   Chen, J R ^c   Chu, J Y ^c   Kuo, C T ^c   Jiao, Z Y ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c Lextar Electronics Corporation   (Taiwan)

^d CHINA UNIVERSITY OF PETROLEUM   (China)

Author keywords

Droop; InGaN; LEDs; narrow quantum barriers

Indexed keywords

BARRIER THICKNESS; CARRIER DISTRIBUTIONS; DROOP; EFFICIENCY DROOPS; EXTERNAL QUANTUM EFFICIENCY; INGAN; LEDS; QUANTUM BARRIERS;

SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84875601003     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2012.2205367     Document Type: Article

References (24)

1. A. Laubsch,M. Sabathil, J. Baur, M. Peter, and B. Hahn, "High-power and high-efficiency InGaN-based light emitters," IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 79-87, Jan. 2010.
2. E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes," Appl. Phys. Lett., vol. 98, 2011,Art. no. 161107.
3. J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, "On the importance of radiative and Auger losses in GaN-based quantum wells," Appl. Phys. Lett., vol. 92, 2008, Art. no 261103.
4. K. T. Delaney, P. Rinke, andC.G.Van deWalle, "Auger recombination rates in nitrides from first principles," Appl. Phys. Lett., vol. 94, 2009, Art. no. 191109.
5. M. F. Schubert, J.R.Xu, Q.Dai, F.W.Mont, J.K.Kim, andE. F. Schubert, "On resonant optical excitation and carrier escape in GaInN/GaN quantum wells," Appl. Phys. Lett., vol. 94, no. Art. no. 081114, 2009.
6. X. Li , H. Y. Liu, X. Ni, Ü. Özgür, and H. Morkoç, "Effect of carrier spillover and Auger recombination on the efficiency droop in InGaNbased blue LEDs," Superlattices Microstruct., vol. 47, pp. 118-122, 2010.
7. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol., vol. 27, 2012, Art. no. 024001.
8. R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Determination of internal parameters for AlGaN-cladding-free-plane InGaN/GaN laser diodes," Appl. Phys. Lett., vol. 99, 2011, Art. no. 171115.
9. H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express, vol. 19, pp. A991-A1007, 2011.
10. H. P. Zhao, G. Y. Liu, and N. Tansu, "Analysis of InGaN-delta-InN quantum wells for light-emitting diodes," Appl. Phys. Lett., vol. 97, 2010, Art. no. 131114.
11. J. Zhang and N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys., vol. 110, 2011, Art. no. 113110.
12. Y. K. En, J.M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 4, pp. 1066-1072, Jul./Aug. 2009.
13. Y.K. En,X.H. Li, J. Biser,W. J.Cao,H.M.Chan, R. P. Vinci, andN. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Crystal Growth, vol. 312, pp. 1311-1315, 2010.
14. Y. F. Li, S. You, M. W. Zhu, L. Zhao, W. T. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett., vol. 98, no. Art. no. 151102, 2011.
15. T. S. Kim, B. J. Ahn, Y. Q. Dong, K. N. Park, J. G. Lee, Y. B. Moon, H. K. Yuh, S. C. Choi, J. H. Lee, S. K. Hong, and J. H. Song, "Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination," Appl. Phys. Lett., vol. 100, no. Art. no. 071910, 2012.
16. W.W. Chow, M. H. Crawford, J. Y. Tsao, and M. Kneissl, "Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model," Appl. Phys. Lett., vol. 97, no. Art. no. 121105, 2010.
17. N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, "Blue-emitting InGaN-GaN double- heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm ," Appl. Phys. Lett., vol. 91, no. Art. no. 243506, 2007.
18. M. Maier, K. Köhler, M. Kunzer, W. Pletschen, and J. Wagner, "Reduced nonthermal rollover of wide-well GaInN light-emitting diodes," Appl. Phys. Lett., vol. 94, no. Art. no. 041103, 2009.
19. H. P. Zhao, G. Y. Liu, R.A. Arif, and N. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes," Solid-State Electron., vol. 54, pp. 1119-1124, 2010.
20. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, "Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes," Appl. Phys. Lett., vol. 92, no. Art. no. 053502, 2008.
21. U. Kaufmann, P. Schlotter, H. Obloh, K. Köhler, and M. Maier, "Hole conductivity and compensation in epitaxial GaN:Mg layers," Phys. Rev. B, vol. 62, pp. 10867-10872, 2000. (Pubitemid 32367257)
22. D. A. Zakheim, A. S. Pavluchenko, D. A. Bauman, K. A. Bulashevich, O. V. Khokhlev, and S. Y. Karpov, "Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling," Phys. Status Solid. A, vol. 209, pp. 456-460, 2012.
23. B. C. Chen, C. Y. Chang, Y. K. Fu, K. F. Huang, Y. H. Lu, and Y. K. Su, "Improved performance of InGaN/GaN light-emitting diodes with thin intermediate barriers," IEEE Photon. Technol. Lett., vol. 23, no. 22, pp. 1682-1684, Nov 15, 2011.
24. M. C. Tsai, S. H. Yen, Y. C. Lu, and Y. K. Kuo, "Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses," IEEE Photon. Technol. Lett., vol. 23, no. 1, pp. 76-78, Jan. 2011.