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Volumn 100, Issue 7, 2012, Pages

Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CARRIER ACCUMULATION; EXCITATION POWER; INGAN/GAN; LASER ILLUMINATION; MULTIPLE QUANTUM-WELL STRUCTURES; NONUNIFORMITY; PIEZO-ELECTRIC FIELDS; QUANTUM WELL; RESONANT EXCITATION;

EID: 84863181628     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3685717     Document Type: Article
Times cited : (36)

References (27)
  • 22
    • 84863172033 scopus 로고    scopus 로고
    • Simulator of Light Emitters based on Nitride Semiconductors (SiLENSe), STR GrouLtd., Russia.
    • Simulator of Light Emitters based on Nitride Semiconductors (SiLENSe), STR Group Ltd., Russia.
  • 23


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.