Thermal annealing effect on zinc nitride thin films deposited by reactive rf-magnetron sputtering process

Materials Science in Semiconductor Processing

Volumn 16, Issue 2, 2013, Pages 318-325

  Wen, Ting ^a   Gautam, Madhav ^a   Soleimanpour, Amir M ^a   Jayatissa, Ahalapitiya H ^a  

^a UNIVERSITY OF TOLEDO   (United States)

Author keywords

Crystal growth; Electronic transport; Optical properties; Photoconductivity; Thermal annealing; Zinc nitride

Indexed keywords

AS-DEPOSITED FILMS; ELECTRONIC CHARACTERISTICS; ELECTRONIC TRANSPORT; REACTIVE RADIO-FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; THERMAL ANNEALING EFFECTS; THERMAL-ANNEALING; ZINC NITRIDES;

CRYSTAL GROWTH; DEPOSITS; NITRIDES; NITROGEN PLASMA; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; ZINC;

ANNEALING;

EID: 84875210193     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.10.004     Document Type: Article

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