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Volumn 520, Issue 6, 2012, Pages 1924-1929
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On the zinc nitride properties and the unintentional incorporation of oxygen
a
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Author keywords
Contamination; Hall effect measurements; Oxygen; Radio frequency magnetron sputtering; Rutherford backscattering spectroscopy; X ray diffraction; Zinc nitride
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Indexed keywords
AS-GROWN;
DIFFERENT SUBSTRATES;
EX SITU;
HALL EFFECT MEASUREMENTS;
HIGH-VACUUM CONDITIONS;
LOW TEMPERATURES;
NITRIDE FILMS;
OPTICAL ENERGY BAND GAP;
OPTICAL TRANSMISSION MEASUREMENTS;
OXYGEN CONCENTRATIONS;
OXYGEN CONTENT;
OXYGEN INCORPORATION;
RADIO-FREQUENCY MAGNETRON SPUTTERING;
RUTHERFORD BACK-SCATTERING;
SPUTTERING SYSTEMS;
SUBSTRATE TEMPERATURE;
WORKING GAS;
ZNO;
BACKSCATTERING;
CARRIER CONCENTRATION;
CONTAMINATION;
CRYSTAL ORIENTATION;
ELECTRIC PROPERTIES;
ELECTRON MOBILITY;
GROWTH RATE;
HALL EFFECT;
HALL MOBILITY;
LIGHT TRANSMISSION;
NITRIDES;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SCANNING ELECTRON MICROSCOPY;
STOICHIOMETRY;
SUBSTRATES;
X RAY DIFFRACTION;
ZINC;
ZINC OXIDE;
OXYGEN;
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EID: 84855919022
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.09.046 Document Type: Article |
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Times cited : (41)
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References (15)
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