The photoluminescence properties of ZnO:N films fabricated by thermally oxidizing Zn3N2 films using plasma-assisted metal-organic chemical vapour deposition

Journal of Physics Condensed Matter

Volumn 16, Issue 25, 2004, Pages 4635-4642

  Wang, D ^a   Liu, Y C ^a,b   Mu, R ^c   Zhang, J Y ^b   Lu, Y M ^b   Shen, D Z ^b   Fan, X W ^b  

^a NORTHEAST NORMAL UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

^c FISK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL LATTICES; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); HETEROJUNCTIONS; LIGHT SOURCES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; OXYGEN; THERMOOXIDATION; THIN FILMS;

BAND GAPS; RECTIFICATION CHARACTERISTICS; STRUCTURAL DEFECTS; VALENCE BANDS;

ZINC OXIDE;

EID: 3042791560     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/25/021     Document Type: Article

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