Photonic devices properties of zinc nitride film produced by reactive magnetron sputtering

2011 International Semiconductor Device Research Symposium, ISDRS 2011

Volumn , Issue , 2011, Pages

  Wen, Ting ^a   Jayatissa, Ahalapitiya H ^a  

^a UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM IMAGE; ANNEALED FILMS; AS-DEPOSITED FILMS; CRYSTALLINITIES; DIRECT BAND GAP; GRAIN SIZE; NITRIDE FILMS; POLYCRYSTALLINE STRUCTURE; PREFERRED ORIENTATIONS; REACTIVE MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; XRD MEASUREMENTS; ZNO;

ANNEALING; NITRIDES; PHOTOCONDUCTIVITY; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE ROUGHNESS; ZINC OXIDE;

ZINC;

EID: 84857217712     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2011.6135309     Document Type: Conference Paper

References (0)