Metalorganic chemical vapor deposition of Er2O3 thin films: Correlation between growth process and film properties

Thin Solid Films

Volumn 517, Issue 8, 2009, Pages 2606-2610

  Giangregorio, Maria M ^a   Losurdo, Maria ^a   Sacchetti, Alberto ^a   Capezzuto, Pio ^a   Bruno, Giovanni ^a  

^a CNR   (Italy)

Author keywords

Eribum oxide; Growth kinetics; Nucleation; Optical properties; Remote plasma metalorganic vapor deposition; Structural properties

Indexed keywords

BIOACTIVITY; CORUNDUM; ERBIUM; FILM GROWTH; GLASS; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL PROPERTIES; ORGANOMETALLICS; PLASMA DEPOSITION; PLASMAS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SUGAR (SUCROSE); THIN FILMS; VAPOR DEPOSITION; VAPORS;

AMORPHOUS GLASS; DIFFERENT SUBSTRATES; ERIBUM OXIDE; FILM PROPERTIES; GROWTH PARAMETERS; GROWTH PROCESS; HIGH REFRACTIVE INDICES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; ORGANOMETALLIC PRECURSORS; PHOTON ENERGY RANGES; PLASMA ACTIVATIONS; REMOTE PLASMA METALORGANIC VAPOR DEPOSITION; ROOT MEAN SQUARE ROUGHNESS; SI(1 0 0 ); STRUCTURAL PROPERTIES;

GROWTH KINETICS;

EID: 59149093969     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.041     Document Type: Article

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