Postdeposition anneal on structural and sensing characteristics of high-κEr 2TiO 5 electrolyte-insulator-semiconductor pH sensors

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 116-118

  Pan, Tung Ming ^a   Lin, Chao Wen ^a   Hsu, Ben Ker ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Drift rate; electrolyte insulator semiconductor (EIS); Er 2TiO 5; hysteresis; sensitivity

Indexed keywords

ANNEALING TEMPERATURES; COSPUTTERING; DRIFT RATES; ELECTROLYTE-INSULATOR-SEMICONDUCTOR; HYSTERESIS VOLTAGE; POST-DEPOSITION ANNEAL; SENSING CHARACTERISTICS; SENSING FILMS; SENSING MEMBRANES; SENSITIVITY; SI SUBSTRATES; SILICATE LAYERS; TIO;

ANNEALING; ELECTROLYTES; HYSTERESIS; INTERFACES (MATERIALS); SILICATES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ERBIUM;

EID: 84655163145     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2171313     Document Type: Article

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