Characterizations of amorphous IGZO thin-film transistors with low subthreshold swing

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1245-1247

  Su, Liang Yu ^a   Lin, Hsin Ying ^a   Lin, Huang Kai ^a   Wang, Sung Li ^a   Peng, Lung Han ^a   Huang, Jianjang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Amorphous InGaZnO; subthreshold swing (SS); thin film transistors (TFTs)

Indexed keywords

CHANNEL STATE; CURRENT RATIOS; DEFECT STATE; FULLY DEPLETED; GATE INSULATOR; INDIUM GALLIUM ZINC OXIDES; INTERFACE DEFECTS; KEY PARAMETERS; MATERIAL PROPERTY; OPERATING CURRENTS; SUBTHRESHOLD SWING; THIN-FILM TRANSISTORS (TFTS);

DEFECTS; GALLIUM; HAFNIUM OXIDES; SILICON COMPOUNDS; THIN FILM TRANSISTORS; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 80052028406     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2160931     Document Type: Article

References (11)

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