Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

Solar Energy Materials and Solar Cells

Volumn 113, Issue , 2013, Pages 144-147

  Yang, Xiaoguang ^a   Wang, Kefan ^a   Gu, Yongxian ^a   Ni, Haiqiao ^a   Wang, Xiaodong ^a   Yang, Tao ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Intermediate band; Quantum dots; Si doping; Solar cells

Indexed keywords

DOPING SI; INAS QDS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; INTERMEDIATE-BAND; REDUCED ENERGY; SI-DOPING;

ENERGY DISSIPATION; MOLECULAR BEAM EPITAXY; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR QUANTUM DOTS; SILICON; SOLAR CELLS;

EFFICIENCY;

EID: 84875154011     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.02.005     Document Type: Review

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