Drift-diffusion modeling for impurity photovoltaic devices

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 3168-3174

  Lin, Albert S ^a   Phillips, Jamie D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Drift diffusion model; Intermediate levels (ILs); Semiconductor; Solar cell

Indexed keywords

ABSORPTION REGION; COMPENSATION SCHEME; CONTINUITY EQUATIONS; DEVICE DESIGN; DRIFT-DIFFUSION MODEL; DRIFT-DIFFUSION MODELING; EXPECTED VALUES; EXPERIMENTAL DATA; IMPURITY PHOTOVOLTAICS; INTERMEDIATE LEVEL; INTERMEDIATE STATE; OPTIMAL DOPING; PHOTOVOLTAIC DEVICES; POISSON'S EQUATION; QUALITATIVE BEHAVIOR; QUANTUM DOT SOLAR CELLS; RECOMBINATION MECHANISMS; SELF-CONSISTENT SOLUTION; SPACE CHARGE EFFECTS;

CONVERSION EFFICIENCY; PHOTOVOLTAIC EFFECTS; POISSON EQUATION; SEMICONDUCTOR MATERIALS; SOLAR CELLS;

SEMICONDUCTOR DOPING;

EID: 77957688397     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2032741     Document Type: Article

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