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Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

Impurity doping in self-assembled InAs/GaAs quantum dots by selection of growth steps

(5) Inoue, Tomoya a Kido, Satoshi a Sasayama, Kengo a Kita, Takashi a Wada, Osamu a

a KOBE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DISTRIBUTIONS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT IMAGE; ELECTRICAL CONDUCTIVITY; GROWTH PROCESS; GROWTH STEPS; IMPURITY DOPING; INAS/GAAS QUANTUM DOTS; PHOTOLUMINESCENCE INTENSITIES; SELF-ASSEMBLED; SELF-ASSEMBLING; SI-DOPING; TEMPERATURE QUENCHING;

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; IMPURITIES; SEMICONDUCTOR DOPING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77957735270 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3483252 Document Type: Article

Times cited : (32)

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