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Journal of Applied Physics

Volumn 110, Issue 10, 2011, Pages

Suppression of nonradiative recombination process in directly Si-doped InAs/GaAs quantum dots

(3) Kita, Takashi a Hasagawa, Ryuichi a Inoue, Tomoya a

a KOBE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DEPENDENCE; EXCESS ELECTRONS; HIGH ENERGY PHOTONS; IMPURITY DOPING; INAS/GAAS QUANTUM DOTS; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE RECOMBINATION CENTERS; NONRADIATIVE RECOMBINATION PROCESS; PHOTOLUMINESCENCE INTENSITIES; PL INTENSITY; SELF-ASSEMBLED GROWTH; THERMAL QUENCHING; THERMALIZATION; TIME-RESOLVED;

MULTIPHOTON PROCESSES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 82555202666 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3660794 Document Type: Conference Paper

Times cited : (25)

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