-
1
-
-
18844466850
-
The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays
-
San Francisco,CA:IEEE
-
R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G. Kane, R.G. Stewart, A. Ipri, C.N. King, P.J. Green, R.T. Flegal, S. Pearson, W.A. Barrow, E. Dickey, K. Ping, S. Robinson, C.W. Tang, S. Van Slyke, F. Chen, J. Shi, M.H. Lu,J.C. Sturm, The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays, IEDM Tech. Dig., San Francisco,CA:IEEE, 1998, pp. 875-878.
-
(1998)
IEDM Tech. Dig.
, pp. 875-878
-
-
Dawson, R.M.A.1
Shen, Z.2
Furst, D.A.3
Connor, S.4
Hsu, J.5
Kane, M.G.6
Stewart, R.G.7
Ipri, A.8
King, C.N.9
Green, P.J.10
Flegal, R.T.11
Pearson, S.12
Barrow, W.A.13
Dickey, E.14
Ping, K.15
Robinson, S.16
Tang, C.W.17
Van Slyke, S.18
Chen, F.19
Shi, J.20
Lu, M.H.21
Sturm, J.C.22
more..
-
2
-
-
0038362743
-
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
-
DOI 10.1126/science.1083212
-
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor Science 300 2003 1269 1272 (Pubitemid 36621429)
-
(2003)
Science
, vol.300
, Issue.5623
, pp. 1269-1272
-
-
Nomura, K.1
Ohta, H.2
Ueda, K.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
3
-
-
54549127206
-
Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display
-
S.H.K. Park, M. Ryu, C.S. Hwang, S. Yang, C. Byun, J.I. Lee, J. Shin, S.M. Yoon, H.Y. Chu, K.I. Cho, K. Lee, M.S. Oh, and S. Im Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display SID Int. Symp. Dig. Technol. 39 2008 629 632
-
(2008)
SID Int. Symp. Dig. Technol.
, vol.39
, pp. 629-632
-
-
Park, S.H.K.1
Ryu, M.2
Hwang, C.S.3
Yang, S.4
Byun, C.5
Lee, J.I.6
Shin, J.7
Yoon, S.M.8
Chu, H.Y.9
Cho, K.I.10
Lee, K.11
Oh, M.S.12
Im, S.13
-
4
-
-
73249133735
-
High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays
-
P.C. Chen, G.Z. Shen, H.T. Chen, Y.G. Ha, C. Wu, S. Sukcharoenchoke, Y. Fu, J. Liu, A. Facchetti, T.J. Marks, M.E. Thompson, and C.W. Zhou High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays ACS Nano 3 2009 3383 3390
-
(2009)
ACS Nano
, vol.3
, pp. 3383-3390
-
-
Chen, P.C.1
Shen, G.Z.2
Chen, H.T.3
Ha, Y.G.4
Wu, C.5
Sukcharoenchoke, S.6
Fu, Y.7
Liu, J.8
Facchetti, A.9
Marks, T.J.10
Thompson, M.E.11
Zhou, C.W.12
-
5
-
-
42349102358
-
Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry
-
S. Ju, J.F. Li, J. Liu, P.C. Chen, Y.G. Ha, F. Ishikawa, H. Chang, C.W. Zhou, A. Facchetti, D.B. Janes, and T.J. Marks Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry Nano. Lett. 8 2008 997 1004
-
(2008)
Nano. Lett.
, vol.8
, pp. 997-1004
-
-
Ju, S.1
Li, J.F.2
Liu, J.3
Chen, P.C.4
Ha, Y.G.5
Ishikawa, F.6
Chang, H.7
Zhou, C.W.8
Facchetti, A.9
Janes, D.B.10
Marks, T.J.11
-
6
-
-
60349091512
-
Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel
-
S.H.K. Park, C.S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J.I. Lee, K. Lee, M.S. Oh, and S. Im Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel Adv. Mater. 21 2009 678 682
-
(2009)
Adv. Mater.
, vol.21
, pp. 678-682
-
-
Park, S.H.K.1
Hwang, C.S.2
Ryu, M.3
Yang, S.4
Byun, C.5
Shin, J.6
Lee, J.I.7
Lee, K.8
Oh, M.S.9
Im, S.10
-
8
-
-
0038136910
-
Transparent electronics
-
DOI 10.1126/science.1085276
-
J.F. Wager Transparent electronics Science 300 2003 1245 1246 (Pubitemid 36618226)
-
(2003)
Science
, vol.300
, Issue.5623
, pp. 1245-1246
-
-
Wager, J.F.1
-
9
-
-
9744248669
-
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
DOI 10.1038/nature03090
-
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 432 2004 488 492 (Pubitemid 39585210)
-
(2004)
Nature
, vol.432
, Issue.7016
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
10
-
-
16244382410
-
Fully transparent ZnO thin-film transistor produced at room temperature
-
DOI 10.1002/adma.200400368
-
E.M.C. Fortunato, P.M.C. Barquinha, A.C.M.B.G. Pimentel, A.M.F. Goncalves, A.J.S. Marques, L.M.N. Pereira, and R.F.P. Martins Fully transparent ZnO thin-film transistor produced at room temperature Adv. Mater. 17 2005 590 594 (Pubitemid 40448713)
-
(2005)
Advanced Materials
, vol.17
, Issue.5
, pp. 590-594
-
-
Fortunato, E.M.C.1
Barquinha, P.M.C.2
Pimentel, A.C.M.B.G.3
Goncalves, A.M.F.4
Marques, A.J.S.5
Pereira, L.M.N.6
Martins, R.F.P.7
-
11
-
-
34547816749
-
Inorganic semiconductors for flexible electronics
-
DOI 10.1002/adma.200602223
-
Y.G. Sun, and J.A. Rogers Inorganic semiconductors for flexible electronics Adv. Mater. 19 2007 1897 1916 (Pubitemid 47229970)
-
(2007)
Advanced Materials
, vol.19
, Issue.15
, pp. 1897-1916
-
-
Sun, Y.1
Rogers, J.A.2
-
12
-
-
34250621864
-
A general route to printable high-mobility transparent amorphous oxide semiconductors
-
DOI 10.1002/adma.200600961
-
D.H. Lee, Y.J. Chang, G.S. Herman, and C.H. Chang A general route to printable high-mobility transparent amorphous oxide semiconductors Adv. Mater. 19 2007 843 847 (Pubitemid 46932815)
-
(2007)
Advanced Materials
, vol.19
, Issue.6
, pp. 843-847
-
-
Lee, D.-H.1
Chang, Y.-J.2
Herman, G.S.3
Chang, C.-H.4
-
13
-
-
1642340172
-
Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel
-
H. Ohta, T. Kambayashi, K. Nomura, M. Hirano, K. Ishikawa, H. Takezoe, and H. Hosono Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel Adv. Mater. 16 2004 312 316
-
(2004)
Adv. Mater.
, vol.16
, pp. 312-316
-
-
Ohta, H.1
Kambayashi, T.2
Nomura, K.3
Hirano, M.4
Ishikawa, K.5
Takezoe, H.6
Hosono, H.7
-
14
-
-
79954525660
-
Transparent flexible organic transistors based on monolayer graphene electrodes on plastic
-
W.H. Lee, J. Park, S.H. Sim, S.B. Jo, K.S. Kim, B.H. Hong, and K. Cho Transparent flexible organic transistors based on monolayer graphene electrodes on plastic Adv. Mater. 23 2011 1752 1756
-
(2011)
Adv. Mater.
, vol.23
, pp. 1752-1756
-
-
Lee, W.H.1
Park, J.2
Sim, S.H.3
Jo, S.B.4
Kim, K.S.5
Hong, B.H.6
Cho, K.7
-
15
-
-
1542723292
-
Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals
-
DOI 10.1126/science.1094196
-
V.C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R.L. Willett, T. Someya, M.E. Gershenson, and J.A. Rogers Elastomeric transistor stamps: reversible probing of charge transport in organic crystals Science 303 2004 1644 1646 (Pubitemid 38338317)
-
(2004)
Science
, vol.303
, Issue.5664
, pp. 1644-1646
-
-
Sundar, V.C.1
Zaumseil, J.2
Podzorov, V.3
Menard, E.4
Willett, R.L.5
Someya, T.6
Gershenson, M.E.7
Rogers, J.A.8
-
16
-
-
33947117047
-
Very high-mobility organic single-crystal transistors with in-crystal conduction channels
-
J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Kawase, T. Shimoda, and S. Ogawa Very high-mobility organic single-crystal transistors with in-crystal conduction channels Appl. Phys. Lett. 90 2007
-
(2007)
Appl. Phys. Lett.
, vol.90
-
-
Takeya, J.1
Yamagishi, M.2
Tominari, Y.3
Hirahara, R.4
Nakazawa, Y.5
Nishikawa, T.6
Kawase, T.7
Shimoda, T.8
Ogawa, S.9
-
17
-
-
66149092677
-
High-performance organic field-effect transistors
-
D. Braga, and G. Horowitz High-performance organic field-effect transistors Adv. Mater. 21 2009 1473 1486
-
(2009)
Adv. Mater.
, vol.21
, pp. 1473-1486
-
-
Braga, D.1
Horowitz, G.2
-
18
-
-
33845884292
-
Patterning organic single-crystal transistor arrays
-
DOI 10.1038/nature05427, PII NATURE05427
-
A.L. Briseno, S.C.B. Mannsfeld, M.M. Ling, S.H. Liu, R.J. Tseng, C. Reese, M.E. Roberts, Y. Yang, F. Wudl, and Z.N. Bao Patterning organic single-crystal transistor arrays Nature 444 2006 913 917 (Pubitemid 46025001)
-
(2006)
Nature
, vol.444
, Issue.7121
, pp. 913-917
-
-
Briseno, A.L.1
Mannsfeld, S.C.B.2
Ling, M.M.3
Liu, S.4
Tseng, R.J.5
Reese, C.6
Roberts, M.E.7
Yang, Y.8
Wudl, F.9
Bao, Z.10
-
19
-
-
23244459722
-
Organic thin-film electronics from vitreous solution-processed rubrene hypereutectics
-
DOI 10.1038/nmat1426
-
N. Stingelin-Stutzmann, E. Smits, H. Wondergem, C. Tanase, P. Blom, P. Smith, and D. De Leeuw Organic thin-film electronics from vitreous solution-processed rubrene hypereutectics Nat. Mater. 4 2005 601 606 (Pubitemid 41092689)
-
(2005)
Nature Materials
, vol.4
, Issue.8
, pp. 601-606
-
-
Stingelin-Stutzmann, N.1
Smits, E.2
Wondergem, H.3
Tanase, C.4
Blom, P.5
Smith, P.6
De Leeuw, D.7
-
20
-
-
73649132641
-
Solution-based patterned growth of rubrene nanocrystals for organic field effect transistors
-
L. Luo, G. Liu, L.W. Huang, X.Q. Cao, M. Liu, H.B. Fu, and J.N. Yao Solution-based patterned growth of rubrene nanocrystals for organic field effect transistors Appl. Phys. Lett. 95 2009
-
(2009)
Appl. Phys. Lett.
, vol.95
-
-
Luo, L.1
Liu, G.2
Huang, L.W.3
Cao, X.Q.4
Liu, M.5
Fu, H.B.6
Yao, J.N.7
-
21
-
-
41649096724
-
Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene
-
B. Park, I. In, P. Gopalan, P.G. Evans, S. King, and P.F. Lyman Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene Appl. Phys. Lett. 92 2008 133302
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 133302
-
-
Park, B.1
In, I.2
Gopalan, P.3
Evans, P.G.4
King, S.5
Lyman, P.F.6
-
22
-
-
34247266124
-
Rubrene thin-film transistors with crystalline and amorphous channels
-
S.W. Park, J.M. Hwang, J.M. Choi, D.K. Hwang, M.S. Oh, J.H. Kim, and S. Ima Rubrene thin-film transistors with crystalline and amorphous channels Appl. Phys. Lett. 90 2007 153512
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 153512
-
-
Park, S.W.1
Hwang, J.M.2
Choi, J.M.3
Hwang, D.K.4
Oh, M.S.5
Kim, J.H.6
Ima, S.7
-
23
-
-
79958029745
-
Abrupt heating-induced high-quality crystalline rubrene thin films for organic thin-film transistors
-
H.M. Lee, H. Moon, H.S. Kim, Y.N. Kim, S.M. Choi, S. Yoo, and S.O. Cho Abrupt heating-induced high-quality crystalline rubrene thin films for organic thin-film transistors Org. Electron. 12 2011 1446 1453
-
(2011)
Org. Electron.
, vol.12
, pp. 1446-1453
-
-
Lee, H.M.1
Moon, H.2
Kim, H.S.3
Kim, Y.N.4
Choi, S.M.5
Yoo, S.6
Cho, S.O.7
-
24
-
-
33750162037
-
Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors
-
J.H. Seo, D.S. Park, S.W. Cho, C.Y. Kim, W.C. Jang, C.N. Whang, K.H. Yoo, G.S. Chang, T. Pedersen, A. Moewes, K.H. Chae, and S.J. Cho Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors Appl. Phys. Lett. 89 2006
-
(2006)
Appl. Phys. Lett.
, vol.89
-
-
Seo, J.H.1
Park, D.S.2
Cho, S.W.3
Kim, C.Y.4
Jang, W.C.5
Whang, C.N.6
Yoo, K.H.7
Chang, G.S.8
Pedersen, T.9
Moewes, A.10
Chae, K.H.11
Cho, S.J.12
-
25
-
-
77955373771
-
Induced crystallization of rubrene in thin-film transistors
-
Z.F. Li, J. Du, Q. Tang, F. Wang, J.B. Xu, J.C. Yu, and Q.A. Miao Induced crystallization of rubrene in thin-film transistors Adv. Mater. 22 2010 3242 3246
-
(2010)
Adv. Mater.
, vol.22
, pp. 3242-3246
-
-
Li, Z.F.1
Du, J.2
Tang, Q.3
Wang, F.4
Xu, J.B.5
Yu, J.C.6
Miao, Q.A.7
-
26
-
-
34548300015
-
Weak epitaxy growth affording high-mobility thin films of disk-like organic semiconductors
-
DOI 10.1002/adma.200602566
-
H.B. Wang, F. Zhu, J.L. Yang, Y.H. Geng, and D.H. Yan Weak epitaxy growth affording high-mobility thin films of disk-like organic semiconductors Adv. Mater. 19 2007 2168 2171 (Pubitemid 47338824)
-
(2007)
Advanced Materials
, vol.19
, Issue.16
, pp. 2168-2171
-
-
Wang, H.1
Zhu, F.2
Yang, J.3
Geng, Y.4
Yan, D.5
-
27
-
-
0026259805
-
Structural basis for high carrier mobility in conjugated oligomers
-
F. Garnier, G. Horowitz, X.Z. Peng, and D. Fichou Structural basis for high carrier mobility in conjugated oligomers Synthetic. Met. 45 1991 163 171
-
(1991)
Synthetic. Met.
, vol.45
, pp. 163-171
-
-
Garnier, F.1
Horowitz, G.2
Peng, X.Z.3
Fichou, D.4
-
29
-
-
11344269281
-
High-performance n- And p-type single-crystal organic transistors with free-space gate dielectrics
-
DOI 10.1002/adma.200401017
-
E. Menard, V. Podzorov, S.H. Hur, A. Gaur, M.E. Gershenson, and J.A. Rogers High-performance n- and p-type single-crystal organic transistors with free-space gate dielectrics Adv. Mater. 16 2004 2097 2101 (Pubitemid 40072900)
-
(2004)
Advanced Materials
, vol.16
, Issue.23-24
, pp. 2097-2101
-
-
Menard, E.1
Podzorov, V.2
Hur, S.-H.3
Gaur, A.4
Gershenson, M.E.5
Rogers, J.A.6
|