Induced crystallization of rubrene in thin-film transistors

Advanced Materials

Volumn 22, Issue 30, 2010, Pages 3242-3246

  Li, Zhefeng ^a   Du, Jun ^a   Tang, Qin ^a   Wang, Feng ^a   Xu, Jian Bin ^a   Yu, Jimmy C ^a   Miao, Qian ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CRYSTALLINITIES; IN-VACUUM; INDUCED CRYSTALLIZATION; OCTADECYLPHOSPHONIC ACIDS; ORGANIC ELECTRONICS; RUBRENES; TEMPLATE LAYERS;

CRYSTALLIZATION; THIN FILMS;

THIN FILM TRANSISTORS;

NAPHTHACENE DERIVATIVE; OCTADECYLTRICHLOROSILANE; PHOSPHONIC ACID DERIVATIVE; RUBRENE; SILANE DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; CRYSTALLIZATION; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; X RAY DIFFRACTION;

CRYSTALLIZATION; MICROSCOPY, ATOMIC FORCE; NANOTECHNOLOGY; NAPHTHACENES; PHOSPHONIC ACIDS; SILANES; TRANSISTORS, ELECTRONIC; X-RAY DIFFRACTION;

EID: 77955373771     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201000786     Document Type: Article

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