Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

Organic Electronics

Volumn 10, Issue 5, 2009, Pages 948-953

  Li, Chunhong ^a   Pan, Feng ^a   Wang, Xiujin ^a   Wang, Lijuan ^a   Wang, He ^a   Wang, Haibo ^a   Yan, Donghang ^a  

^a CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

Hysteresis; Insulator; Organic thin film transistors; Ta2O5; Work function

Indexed keywords

ALUMINUM; CAPACITANCE; CHROMIUM; COMPUTER CIRCUITS; DIELECTRIC MATERIALS; ELECTRODES; ELECTRON INJECTION; FIELD EFFECT TRANSISTORS; GOLD; HIGH-K DIELECTRIC; HYSTERESIS; METAL INSULATOR BOUNDARIES; MIS DEVICES; TANTALUM OXIDES; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; WORK FUNCTION;

HIGH DIELECTRIC CONSTANT MATERIALS; HIGH-WORK-FUNCTION METAL; HYSTERESIS CHARACTERISTICS; INSULATOR; METAL-INSULATOR-SEMICONDUCTOR DEVICES; ORGANIC THIN FILM TRANSISTOR (OTFTS); ORGANIC THIN FILM TRANSISTORS; TA2O5;

THIN FILM TRANSISTORS;

EID: 67649205179     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.05.001     Document Type: Article

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