High-performance n- And p-type single-crystal organic transistors with free-space gate dielectrics

Advanced Materials

Volumn 16, Issue 23-24, 2004, Pages 2097-2101

  Menard, Etienne ^a   Podzorov, Vitaly ^b   Hur, Seung Hyun ^a   Gaur, Anshu ^a   Gershenson, Michael E ^b   Rogers, John A ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ELASTOMERS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; GATES (TRANSISTOR); LAMINATING; MATHEMATICAL MODELS; SILICON WAFERS; VAN DER WAALS FORCES;

CRYSTAL PACKING; DANGLING BONDS; ORGANIC FIELD EFFECT TRANSISTORS (OFET); TETRACYANOQUINODIMETHANE (TCNQ);

SINGLE CRYSTALS;

EID: 11344269281     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200401017     Document Type: Article

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