Transparent Organic Thin-Film Transistor with a Laterally Grown Non-Planar Phthalocyanine Channel

Advanced Materials

Volumn 16, Issue 4, 2004, Pages 312-316

  Ohta, Hiromichi ^a   Kambayashi, Takuya ^b   Nomura, Kenji ^b   Hirano, Masahiro ^a   Ishikawa, Ken ^b   Takezoe, Hideo ^b   Hosono, Hideo ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CERAMIC MATERIALS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; YTTRIUM ALLOYS;

DRAIN ELECTRODES; OPTICAL ABSORPTIONS;

THIN FILM TRANSISTORS;

EID: 1642340172     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200306015     Document Type: Article

References (26)

1. For a review article see C. D. Dimitrikopoulos, D. J. Mascaro, IBM J. Res. Dev. 2001, 45, 11.
2. M. Ichikawa, H. Yanagi, Y. Shimizu, S. Hotta, N. Suganuma, T. Koyama, Adv. Mater. 2002, 14, 1272.
3. C. D. Dimitrakopoulos, A. R. Brown, A. Pomp, J. Appl. Phys. 1996, 80, 2501.
4. R. F. Ziolo, C. H. Griffiths, J. M. Troup, J. Chem. Soc., Dalton Trans. 1980, 2300.
5. C. H. Griffiths, M. S. Walker, P. Goldstein, Mol. Cryst. Liq. Cryst. 1976, 33, 149.
6. W. Hiller, J. Strahle, W. Kobel, M. Hanack, Z. Kristallogr. 1982, 159, 173.
7. H. Hosoda, T. Wada, A. Yamada, A. F. Garito, H. Sasabe, Nonlinear Opt. l992, 3, 183.
8. S. M. O'Flaherty, S. V. Hold, M. J. Cook, T. Torres, Y. Chen, M. Hanack, W. J. Blau, Adv. Mater. 2003, 15, 19.
9. H. Hoshi, T. Yamada, K. Ishikawa, H. Takezoe, A. Fukuda, J. Chem. Phys. 1997, 107, 1687.
10. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, Science 2003, 300, 1269.
11. H. Tada, H. Touda, M. Takada, K. Matsushige, Appl. Phys. Lett. 2000, 76, 873.
12. Z. Bao, A. J. Lovinger, A. Dodabalapur, Appl. Phys. Lett. 1996, 69, 3066.
13. S. Hoshino, T. Kamata, K. Yase, J. Appl. Phys. 2002, 92, 6028.
14. T. Manaka, K. Taguchi, K. Ishikawa, H. Takezoe, Jpn. J. Appl. Phys. 2000, 39, 4910.
15. H. Ohta, T. Kambayashi, M. Hirano, H. Hoshi, K. Ishikawa, H. Takezoe, H. Hosono, Adv. Mater. 2003, 15, 1258.
16. PDF No. 41-1105; K. Martin, G. McCarthy, North Dakota State University, Fargo, North Dakota, USA. ICDD Grant-in-Aid (1989).
17. PDF No. 43-1028; K. Martin, G. McCarthy, North Dakota State University, Fargo, North Dakota, USA. ICDD Grant-in-Aid (1991).
18. M. Sayer, M. S. Martin, Thin Solid Films 1970, 6, 261.
19. B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, J. Han, Appl. Phys. Lett. 2002, 80, 1661.
20. H. Tada, S. Mashiko, Mol. Cryst. Liq. Cryst. 1995, 267, 145.
21. a) Y. Fujikawa, S. Mashiko, Thin Solid Films 1998, 331, 148.
22. b) Z. Bao, V. Kuck, J. A. Rogers, M. A. Paczkowski, Adv. Funct. Mater. 2002, 12, 526.
23. T. Huang, J. Phys. Soc. Jpn. 1987, 56, 1213.
24. H. Ohta, H. Tanji, M. Orita, H. Hosono, H. Kawazoe, Mater. Res. Soc. Symp. Proc. 1999, 570, 309.
25. S. Nakao, M. Gomyou, H. Hoshi, K. Ishikawa, H. Takezoe, Jpn. J. Appl. Phys. 1997, 36, L622.
26. We fabricated VOPc films at substrate temperatures of 50, 100, 150, and 200°C on the ITO/YSZ substrate. Although the surface morphology of the VOPc films varied with temperature, the orientation of all films was independent of temperature, i.e., (010) VOPc ∥ (111) ITO. Typical three-dimensional growth occurred at low temperatures (<150°C). In addition, a rather large domain (∼5 μm) with crack and hole structures was observed when VOPc film was deposited at 200°C, most likely due to the fact that re-evaporation of VOPc occurred during film growth. Therefore, we fixed the substrate temperature at 150°C.