Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication

Journal of Applied Physics

Volumn 111, Issue 6, 2012, Pages

  Zhang, Can ^a   Yan, Feng ^a   Bayer, Bernhard C ^a   Blume, Raoul ^b   Van Der Veen, Marleen H ^c   Xie, Rongsi ^a   Zhong, Guofang ^a   Chen, Bingan ^a   Knop Gericke, Axel ^b   Schlögl, Robert ^b   Capraro, Bernard D ^d   Hofmann, Stephan ^a   Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c IMEC   (Belgium)

^d Intel Ireland Ltd   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED CARBON NANOTUBES; CARBON NANOTUBE SYNTHESIS; COBALT DISILICIDE; COMPATIBLE MATERIALS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONDUCTIVE SUBSTRATES; CONVENTIONAL CATALYST; DEEP HOLES; ELECTRICALLY CONDUCTIVE; FORMATION METHOD; FORMATION PROCESS; HYDROGEN REDUCTION; INTERCONNECT DEVICES; METAL CATALYST; REACTIVE ION ETCH; SELF-ALIGNED; VERTICAL SURFACE;

CARBON NANOTUBES; COBALT; DIELECTRIC DEVICES; HYDROGEN; OHMIC CONTACTS;

CATALYSTS;

EID: 84859530374     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694678     Document Type: Article

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