Analysis of carbon nanotube based Through Silicon Vias

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 51-57

  Kannan, Sukeshwar ^a   Gupta, Anurag ^a   Kim, Bruce C ^a   Mohammed, Falah ^b   Ahn, Byoungchul ^c  

^a UNIVERSITY OF ALABAMA   (United States)

^b AN NAJAH NATIONAL UNIVERSITY   (Palestine)

^c Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL MODELING; PACKAGE INTERCONNECTS; THROUGH SILICON VIAS;

CARBON NANOTUBES;

EID: 77955206255     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490885     Document Type: Conference Paper

References (16)

1. A. Zhang, et. al., "Development of through silicon via (TSV) interposer technology for large die fine-pitch Cu/low-k FCBGA package," IEEE Electronics and Components Technology Conference, 2009.
2. S.W. Ho, et. al., "High RF performance TSV silicon carrier for high frequency application," IEEE Electronics and Components Technology Conference, 2008.
3. A. Naeemi, et al., "Performance Comparison Between Carbon Nanotube and Copper Interconnects for GSI," Electron Device Letters, Vol.26, No.2, pp.84-86, 2005.
4. W.Steinhogl, et al., "Comprehensive Study of the Resistivity of Copper Wires With Lateral Dimensions 100 nm and Smaller," J. of Applied Physics, Vol 97, No.2, 023706-1-023706-23707, 2005.
5. International Technology Roadmap for Semiconductors 2008 Ed., http://www.itrs.net.
6. A. Naeemi and J D. Meindl, Chapter 7, Carbon nanotube Electronics, Series on Integrated Circuits and Systems, 2009.
7. S.Datta, "Electrical Resistance: An Atomistic View," Nanotechnology, Vol 15, pp.S433-S451, 2004.
8. P.J Burke, " Luttinger Liquid Theory as a Model of the Gigahertz Electrical Properties of Carbon Nanotube," IEEE Trans. On Nanotechnology, Vol 1, No.3, pp.129-144, 2002.
9. S. Datta, "Electronic Transport in Mesoscopic Systems," Cambridge University Press, 1995.
10. Z. Yu and P.J Burke, "Microwave Transport in Metallic Single-Walled Carbon Nanotubes," NanoLetters, Vol 5, No.7, pp 1403.
11. C. Ryu, Jiwang Lee, H. Lee, K. Lee, T. Oh, J. Kim,"High Frequency Electrical Model of Through Wafer Via for 3-D Stacked Chip Packaging," Electronics System Integration Technology Conference, 2006.
12. Vasilis F. Pavlidis, Eby G. Friedman, "Three-dimensional integrated circuit design", pp 35-65, 2009.
13. K. Banerjee and N. Srivastava," Are Carbon Nanotubes the Future of VLSI interconnections?" Proceedings of the 43rd annual Design Automation Conference, 2006.
14. B.Q.Wei, et al., "Reliability and Current Carrying Capacity of Carbon Nanotube," Applied Physics let.Vol 79, No.8,pp 1172-1174, 2001.
15. H. Kikuchi, et. al., "Tungsten Through-Silicon Via Technology for three dimensional LSIs," Journal of Applied Physics. 47, pp. 2801-2806, 2008.
16. C. Bermond, L. Cadix, A. Farcy, T. Lacrevaz, P. Leduc, B. Flechet, "High Frequency Characterization and Modeling of High Density TSV in 3D Integrated Circuits," 13th Workshop on Signal Propagation on Interconnects, 2009.