Quantum dot behavior in bilayer graphene nanoribbons

ACS Nano

Volumn 5, Issue 11, 2011, Pages 8769-8773

  Wang, Minsheng ^a   Song, Emil B ^a   Lee, Sejoon ^a,b   Tang, Jianshi ^a   Lang, Murong ^a   Zeng, Caifu ^a   Xu, Guangyu ^a   Zhou, Yi ^a   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Dongguk University   (South Korea)

Author keywords

bilayer graphene; Coulomb blockade oscillation; nanoribbon; quantum dot

Indexed keywords

BI-LAYER; CHARGE NEUTRALITY; CONCENTRATION FLUCTUATION; COULOMB BLOCKADE OSCILLATION; COULOMB OSCILLATION; DISORDERED SURFACES; ELECTRONIC APPLICATION; ELECTRONIC TRANSPORT PROPERTIES; ELEVATED TEMPERATURE; GRAPHENE NANORIBBONS; NANORIBBONS; POTENTIAL BARRIERS; RELATIVE POSITIONS; SINGLE QUANTUM DOT;

CARRIER CONCENTRATION; COULOMB BLOCKADE; DISTRIBUTION FUNCTIONS; ELECTRONIC PROPERTIES; GRAPHENE; SURFACE POTENTIAL; TRANSPORT PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 81855177497     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2027566     Document Type: Article

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