Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells

Journal of Applied Physics

Volumn 113, Issue 9, 2013, Pages

  Duchamp, M ^a   Boothroyd, C B ^a   Moreno, M S ^b   Van Aken, B B ^c   Soppe, W J ^c   Dunin Borkowski, R E ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b CENTRO ATÓMICO BARILOCHE   (Argentina)

^c ECN Solar Energy   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; AB INITIO; AMORPHOUS THIN FILMS; BORON-DOPED LAYER; CHANGES IN VOLUME; CO-DOPED; FINE STRUCTURES; FITTING FUNCTIONS; LOG-NORMAL; MULTIPLE SCATTERING CALCULATIONS; N-DOPED; P-DOPED LAYERS; REAL-SPACE; STEEL FOILS; TEST SAMPLES; VALENCE ELECTRON; VOLUME PLASMON;

CALCULATIONS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; PHOSPHORUS; PLASMONS; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON SOLAR CELLS;

AMORPHOUS SILICON;

EID: 84874763178     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4793587     Document Type: Article

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