Boron observation in p-type silicon device by spherical aberration corrected scanning transmission electron microscope

Applied Physics Express

Volumn 1, Issue 7, 2008, Pages 0740011-0740013

  Asayama, Kyoichiro ^a   Hashikawa, Naoto ^a   Kajiwara, Kazuto ^a   Yaguchi, Toshie ^b   Konno, Mitsuru ^b   Mori, Hirotaro ^c  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; BORON; BORON COMPOUNDS; DAMAGE DETECTION; ELECTRON DEVICES; ELECTRON MICROSCOPES; FOCUSED ION BEAMS; METALLIC COMPOUNDS; MICROSCOPES; OPTICAL PROPERTIES; SEMICONDUCTING SILICON; SILICON; SPHERES; TRANSMISSION ELECTRON MICROSCOPY;

ANALYTICAL TOOLS; BORON DETECTIONS; DOPANT DISTRIBUTIONS; METAL OXIDES; SAMPLE HOLDERS; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SILICON DEVICES; SPHERICAL ABERRATIONS; TRANSISTOR CHARACTERISTICS; WEAK SIGNALS;

NONMETALS;

EID: 57649084572     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.074001     Document Type: Article

References (22)

1. S. A. Abbas and R. D. Dockerty: Appl. Phys. Lett. 27 (1975) 147.
2. K. Kinugawa, M. Kakumu, S. Yokogawa, and K. Hashimoto: Proc. Symp. VLSI Technol., 1985, p. 116.
3. D. Hisamoto, W. C. Lee, J. Kedzierski, E. Anderson, H. Takeuchi, K. Asano, T. J. King, J. Bokor, and C. Hu: IEDM Tech. Dig., 1998, p. 1032.
4. Y. K. Choi, N. Lindert, P. Xuan, S. Tang, D. Ha, E. Anderson, T. J. King, J. Bokor, and C. Hu: IEDM Tech. Dig., 2001, p. 421.
5. H. Murakoshi, H. Kakibayashi, and T. Tsuchiya: J. Electron Microsc. 45 (1996) 236.
6. R. Tsuneta, M. Koguchi, K. Nakamura, and A. Nishida: J. Electron Microsc. 51 (2002) 167.
7. Y. Bando, S. Nakano, and K. Kurashima: J. Electron Microsc. 45 (1996) 135.
8. T. Sekiguchi, K. Kimoto, T. Aoyama, and Y. Mitsui: Jpn. J. Appl. Phys. 37 (1998) L694.
9. T. S. Wang, A. G. Cullis, E. J. H. Collart, A. J. Murrell, and M. A. Foad: Mater. Res. Soc. Symp. Proc. 650 (2001) R9.3.1.
10. C. C. Ahn: Transmission Electron Energy Loss Spectrometry in Materials Science and the EELA Atlas (John Wiley & Sons, New York, 2006) p. 71.
11. D. D. Perovie, C. J. Rossouw, and A. Howie: Ultramicroscopy 52 (1993) 353.
12. S. Hillyard and J. Silcox: Ultramicroscopy 58 (1995) 6.
13. S. Muto, H. Sugiyama, T. Kimura, and T. Tanabe: Jpn. J. Appl. Phys. 43 (2004) 1076.
14. H. Rose: Optik 85 (1990) 19.
15. M. Haider, H. Rose, S. Uhlemann, B. Kabius, and K. Urban: J. Electron Microsc. 47 (1998) 395.
16. M. Haider, S. Uhlemann, and J. Zach: Ultramicroscopy 81 (2000) 163.
17. N. Tanaka, J. Yamasaki, K. Usuda, and N. Ikarashi: J. Electron Microsc. 52 (2003) 69.
18. M. Watanabe, D. W. Ackland, A. Burrows, C. J. Kiely, D. B. Williams, M. Kanno, and R. Hynes: Microsc. Microanal. 11 (2005) 2132.
19. T. Hirano, K. Ueda, and T. Imazawa: Trans. Mater. Res. Soc. J. 28 (2003) 35.
20. K. Nakamura, H. Kakibayashi, K. Kanehori, and N. Tanaka: J. Electron Microsc. 46 (1997) 33.
21. M. Konno, Y. Suzuki, T. Yaguchi, T. Kamino, and T. Ohnishi: Proc. 16th Int. Microscopy Cong., 2006, p. 1106.
22. R. F. Egerton: Electron Energy-Loss Spectroscopy in the Electron Microscope (Plenum Press, New York, 1986) p. 257.