Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 1377-1380

  Dubois, Christiane ^a   Prudon, Gilles ^a   Gautier, Brice ^a   Dupuy, Jean Claude ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

Boron; Ion yield; Isotopes; Matrix effects; Quantification; Silicon; SIMS

Indexed keywords

BINARY ALLOYS; BORON; SECONDARY ION MASS SPECTROMETRY; SILICON;

BORON CONCENTRATIONS; BORON IN SILICON; COMPARATIVE METHODS; ION YIELDS; MATRIX EFFECTS; QUANTIFICATION; SILICON SAMPLES; SIMULTANEOUS ANALYSIS;

ISOTOPES;

EID: 56449087275     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.051     Document Type: Article

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