SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 358, Issue 17, 2012, Pages 2179-2182

EELS measurements of boron concentration profiles in p-a-Si and nip a-Si solar cells

(5) Van Aken, Bas B a Duchamp, Martial b Boothroyd, Chris B b Dunin Borkowski, Rafal E c Soppe, Wim J a

a TNO (Netherlands)

b TECHNICAL UNIVERSITY OF DENMARK (Denmark)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Doping concentration; Electron energy loss spectroscopy (EELS); p Type SiC; Thin film Si; Transmission electron microscopy

Indexed keywords

ABSORBER LAYERS; BORON CONCENTRATIONS; C-SI SOLAR CELL; CARBON CONCENTRATIONS; DARK CONDUCTIVITY; DOPING CONCENTRATION; FOCUSSED ION BEAM MILLINGS; INCIDENT LIGHT; LAYER DEFECTS; LINEAR RELATION; LOCAL VARIATIONS; OPTIMUM EFFICIENCY; P-LAYER; P-TYPE SI; P-TYPE SIC; PLASMON ENERGY; PROCESS CHAMBERS; SPATIALLY RESOLVED;

ACTIVATION ENERGY; BORON; ELECTRIC FIELDS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY GAP; SILICON CARBIDE; SILICON SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 84865795837 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2011.12.055 Document Type: Conference Paper

Times cited : (5)

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