Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride

Thin Solid Films

Volumn 446, Issue 2, 2004, Pages 218-226

  Caussat, B ^a   Scheid, E ^b   De Mauduit, B ^c   Berjoan, R ^d  

^a LABORATOIRE DE GÉNIE CHIMIQUE   (France)

^b LAAS CNRS   (France)

^c CEMES CNRS   (France)

^d UPR CNRS 8521   (France)

Author keywords

CVD; In situ boron doped silicon; Microelectronics; X ray photoelectron spectroscopy

Indexed keywords

BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DOPING (ADDITIVES); HYDROCHLORIC ACID; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; POLYSILICON; REACTION KINETICS; SILANES; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE FRACTION; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

THIN FILMS;

EID: 0346750524     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.010     Document Type: Article

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