Carrier mobility degradation in highly B-doped junctions

Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Volumn , Issue , 2009, Pages 34-37

  Aboy, Maria ^a   Pelaz, Lourdes ^a   López, Pedro ^a   Bruno, E ^b   Mirabella, S ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS BEHAVIORS; ATOMISTIC SIMULATIONS; BORON-INTERSTITIAL CLUSTERS; CARRIER MOBILITY DEGRADATIONS; CONCENTRATION OF; CONCENTRATION PROFILES; DOPANT CONCENTRATIONS; HALL MEASUREMENTS; SCATTERING MECHANISMS;

BORON; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRON DEVICES; HOLE CONCENTRATION; SHEET RESISTANCE;

HOLE MOBILITY;

EID: 65249138690     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2009.4800423     Document Type: Conference Paper

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